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| DC COMPONENTS CO., LTD. R BC847 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 1 o .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PD TJ TSTG C) Rating 50 45 6 100 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) Symbol .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min 50 45 6 580 110 2% Typ 90 200 700 900 300 3.5 Max 15 250 600 700 770 800 6 Unit V V V nA mV mV mV mV mV mV MHz pF Test Conditions IC=10A IC=1mA IE=1A VCB=30V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=2mA, VCE=5V IC=10mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380s, Duty Cycle Classification of hFE Rank Range A 110~220 B 200~450 C 420~800 |
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